BSP170P Datasheet | Siemens Semiconductor Group

BSP 170 P Preliminary data SIPMOS® Power Transistor - P-Channel - Enhancement mode - Avalanche rated - dv/dt rated Pin 1 G Type BSP 170 P VDS 60 V ID RDS(on) Package @ VGS VGS = -10 V SOT-223 Maximum Ratings , at Tj = 25°C, unless otherwise specified Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current TA = 25 °C Avalanche energy, single pulse ID = -1.9 A, VDD = -25 V, RGS = 25 Ω Avalanche current,periodic limited by Tjmax Avalanche energy,periodic limited by Tj(max) Reverse diode dv/dt IS = -1.9 A, VDD ≤V(BR)DSS, di/dt = 200 A/µs, Tjmax = 150 °C Gate source voltage Power dissipation TA = 25 °C Operating temperature Storage temperature IEC climatic category; DIN...