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BSP 170 P
Preliminary data SIPMOS® Power Transistor • P-Channel
• Enhancement
mode
• Avalanche rated • dv/dt rated Pin 1 G Type BSP 170 P VDS 60 V ID RDS(on) Package @ VGS VGS = -10 V SOT-223 Maximum Ratings , at Tj = 25°C, unless otherwise specified Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current TA = 25 °C Avalanche energy, single pulse ID = -1.9 A, VDD = -25 V, RGS = 25 Ω Avalanche current,periodic limited by Tjmax Avalanche energy,periodic limited by Tj(max) Reverse diode dv/dt IS = -1.9 A, VDD ≤V(BR)DSS, di/dt = 200 A/µs, Tjmax = 150 °C Gate source voltage Power dissipation TA = 25 °C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj Tstg ±20 1.8 -55 ... +150 -55...+150 55/150/56 V W °C EAS IAR EAR dv/dt 70 -1.
BSP170P Datasheet
