BSP317 Datasheet | Siemens Semiconductor Group

BSP 317 SIPMOS ® Small-Signal Transistor - P channel - Enhancement mode - Logic Level - VGS(th) = -0 -2.0 V Pin 1 G Type BSP 317 Type BSP 317 Pin 2 D Pin 3 S Pin 4 D -200 V -0.37 A RDS(on) 6Ω Package SOT-223 Marking Ordering Code Q67000-S94 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -200 -200 Unit V VDS VDGR VGS ID RGS = 20 kΩ Gate source voltage Continuous drain current ± 20 A -0.37 TA = 25 °C DC drain current, pulsed IDpuls -1.48 TA = 25 °C Power dissipation Ptot TA = 25 °C Semiconductor Group Sep-12-1996 BSP 317 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 70 ≤ 10 E 55 / 150 / 56 K/W Unit °C Tj Tstg Rth JA Rth JS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max....