BSP373 Datasheet | Siemens Semiconductor Group

BSP 373 SIPMOS ® Small-Signal Transistor - N channel - Enhancement mode - Avalanche rated - VGS(th)= 2 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 373 Type BSP 373 100 V 1.7 A RDS(on) 0.3 Ω Package SOT-223 Marking BSP 373 Ordering Code Q67000-S301 Tape and Reel Information E6327 Maximum Ratings Parameter Continuous drain current Symbol Values 1.7 Unit A ID IDpuls TA = 28 °C DC drain current, pulsed TA = 25 °C Avalanche energy, single pulse 45 m J ID = 1.7 A, VDD = 25 V, RGS = 25 Ω L = 23.3 m H, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 1.8 TA = 25 °C Semiconductor Group Sep-12-1996 BSP 373 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 70 ≤ 10 E 55 / 150 / 56 K/W Unit °C Tj Tstg Rth JA Rth JS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max....