BSP78 Datasheet | Siemens Semiconductor Group

Preliminary data HITFET®BSP 78 Smart Lowside Power Switch Features - Logic Level Input - Input Protection (ESD) - Thermal shutdown with auto restart - Overload protection - Short circuit protection - Overvoltage protection - Current limitation Product Summary Drain source voltage V DS 40 50 3 500 V mΩ A m J On-state resistance Nominal load current Clamping energy R DS(on) ID(Nom) EAS - Analog driving possible Application - All kinds of resistive, inductive and capacitive loads in switching or linear applications - µC patible power switch for 12 V and 24 V DC applications - Replaces electromechanical relays and discrete circuits N channel vertical power FET in Smart SIPMOS® technology. Fully protected by embedded protection functions. General Description Pin 1 2 3 TAB Symbol IN DRAIN SOURCE DRAIN Function Input Output to the load Ground Output to the load Semiconductor Group Page...