BTS120 Datasheet | Siemens Semiconductor Group

Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shortet to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 120 100 V 19 A RDS(on) 0.1 Ω Package TO-220AB Ordering Code C67078-A5009-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 100 100 ± 20 19 3.5 76 55 800 75 - 55 ... + 150 E 55/150/56 K/W ≤ 1.67 ≤ 75 °C - W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg - - TC = 25 °C Tj = - 55 ... + 150 °C Short circuit dissipation, Tj = - 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA Semiconductor Group BTS 120 Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 m A Gate threshold voltage VGS = VDS, ID = 1 m A Zero gate voltage drain current VGS = 0 V, VDS = 100 V Tj = 25 °C Tj = 125 °C Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 10 V, ID = 12 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID =12 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Values typ. max. Unit V(BR)DSS - 3.0 - 3.5 VGS(th) I DSS - - 1 100 10...