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BTS131 - MOSFET

Features

  • q q q q q N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 131 VDS 50 V ID 25 A RDS(on) 0.06 Ω Package TO-220AB Ordering Code C67078-A5002-A4 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circui.

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Datasheet Details

Part number BTS131
Manufacturer Siemens Semiconductor Group
File Size 295.08 KB
Description MOSFET
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1) TEMPFET® BTS 131 Features q q q q q N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 131 VDS 50 V ID 25 A RDS(on) 0.06 Ω Package TO-220AB Ordering Code C67078-A5002-A4 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 50 50 ± 10 25 6.5 100 80 1200 75 – 55 ... + 150 E 55/150/56 K/W ≤ 1.67 ≤ 75 °C – W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 ... + 150 °C Short circuit dissipation, Tj = – 55 ...
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