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BTS307 - Smart Highside Power Switch

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.

Fully protected by embedded protection functions.

Key Features

  • Overload protection.
  • Current limitation.
  • Short circuit protection.
  • Thermal shutdown.
  • Overvoltage protection.
  • Fast demagnetization of inductive loads.
  • Reverse battery protection1).
  • Open drain diagnostic output.
  • Open load detection in OFF-state.
  • CMOS compatible input.
  • Loss of ground and loss of Vbb protection.
  • Electrostatic discharge (ESD) protection Product Summary Overvoltage protection.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PROFET® BTS 307 Smart Highside Power Switch Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection • Fast demagnetization of inductive loads • Reverse battery protection1) • Open drain diagnostic output • Open load detection in OFF-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Vbb(AZ) Vbb(on) RON IL(ISO) 65 V 5.8 ... 58 V 250 mΩ 1.