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BTS555 - Smart Highside High Current Power Switch

General Description

N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS® chip on chip technology.

Fully protected by embedded protection functions.

Key Features

  • Overload protection.
  • Current limitation.
  • Short circuit protection.
  • Overtemperature protection.
  • Overvoltage protection (including load dump).
  • Clamp of negative voltage at output.
  • Fast deenergizing of inductive loads 1).
  • Low ohmic inverse current operation.
  • Reverse battery protection.
  • Diagnostic feedback with load current sense.
  • Open load detection via current sense.
  • Loss of Vbb protection2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PROFET® Target Data Sheet BTS555 Smart Highside High Current Power Switch Features • Overload protection • Current limitation • Short circuit protection • Overtemperature protection • Overvoltage protection (including load dump) • Clamp of negative voltage at output • Fast deenergizing of inductive loads 1) • Low ohmic inverse current operation • Reverse battery protection • Diagnostic feedback with load current sense • Open load detection via current sense • Loss of Vbb protection2) • Electrostatic discharge (ESD) protection Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio Vbb(AZ) 63 V VON(CL) 42 V Vbb(on) 5.0 ... 34 V RON 2.