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BTS712N1 - Smart Four Channel Highside Power Switch

Datasheet Summary

Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.

Fully protected by embedded protection functions.

Features

  • Overload protection.
  • Current limitation.
  • Short-circuit protection.
  • Thermal shutdown.
  • Overvoltage protection (including load dump).
  • Fast demagnetization of inductive loads.
  • Reverse battery protection1).
  • Undervoltage and overvoltage shutdown with auto-restart and hysteresis.
  • Open drain diagnostic output.
  • Open load detection in OFF-state.
  • CMOS compatible input.
  • Loss of ground and loss of Vbb.

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Datasheet preview – BTS712N1

Datasheet Details

Part number BTS712N1
Manufacturer Siemens Semiconductor Group
File Size 183.32 KB
Description Smart Four Channel Highside Power Switch
Datasheet download datasheet BTS712N1 Datasheet
Additional preview pages of the BTS712N1 datasheet.

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Full PDF Text Transcription

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PROFET® BTS 712 N1 Smart Four Channel Highside Power Switch Features • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in OFF-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Product Summary Overvoltage Protection Operating voltage active channels: On-state resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) Vbb(AZ) 43 V Vbb(on) 5.0 ... 34 V two parallel four parallel one 200 100 50 mΩ 1.9 2.8 4.
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