BTS933 Datasheet | Siemens Semiconductor Group

Features - Logic Level Input - Input Protection (ESD) - Thermal Shutdown - Overload protection - Short circuit protection - Overvoltage protection - Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 50 3 7 V mΩ A A 2000 m J limitation - Maximum current adjustable with external resistor - Current sense - Status feedback with external input resistor - Analog driving possible Application - All kinds of resistive, inductive and capacitive loads in switching or linear applications - µC patible power switch for 12 V and 24 V DC applications - Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protected functions. V bb + LOAD NC Drain dv/dt limitation Current limitation Overvoltage protection M CC Overtemperature protection ESD R CC Overload protection Short circuit circuit Short protection protection Source 5 HITFET ® Semiconductor Group Page 1 BTS 933 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection RCC = 0 Ω without RCC Continuous input current -0.2V ≤ VIN ≤...