BTS941 Description
N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protected functions. +150 149 4000 3000 mA VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation Tj Tstg Ptot EAS °C W mJ V TC = 25 °C Unclamped single pulse inductive energy ID(ISO) = 12 A Electro static discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7...
BTS941 Key Features
- Logic Level Input
- Input Protection (ESD)
- Thermal Shutdown
- Overload protection
- Short circuit protection
- Overvoltage protection
- Current
- Maximum current adjustable with external resistor
- Current sense
- Status feedback with external input resistor
BTS941 Applications
- µC patible power switch for 12 V and 24 V DC applications