• Part: BUP306D
  • Description: IGBT
  • Manufacturer: Siemens Semiconductor Group
  • Size: 221.51 KB
Download BUP306D Datasheet PDF
Siemens Semiconductor Group
BUP306D
BUP306D is IGBT manufactured by Siemens Semiconductor Group.
BUP 306D IGBT With Antiparallel Diode Preliminary data - Low forward voltage drop - High switching speed - Low tail current - Latch-up free - Including fast free-wheel diode Pin 1 Pin 2 Pin 3 Type BUP 306D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Package TO-218 AB Ordering Code Q67040-A4222-A2 1200V 23A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 23 15 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 46 30 TC = 25 °C TC = 90 °C Diode forward current TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls TC = 25 °C Power dissipation Ptot...