• Part: BUP307D
  • Description: IGBT
  • Manufacturer: Siemens Semiconductor Group
  • Size: 342.77 KB
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Datasheet Summary

BUP 307D IGBT With Antiparallel Diode Preliminary data - Low forward voltage drop - High switching speed - Low tail current - Latch-up free - Including fast free-wheel diode Pin 1 G Type BUP 307D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4221-A2 Pin 3 E Package TO-218 AB 1200V 35A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 35 23 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 70 46 TC = 25 °C TC = 90 °C Diode forward current TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls TC = 25 °C Power dissipation Ptot W...