BUP309 Datasheet | Siemens Semiconductor Group

BUP 309 IGBT Preliminary data - High switching speed - Low tail current - Latch-up free - Avalanche rated - Low forward voltage drop Remark: The TO-218 AB case doesn't solve the standards VDE 0110 and UL 508 for creeping distance Pin 1 G Type BUP 309 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V Pin 2 C Ordering Code Q67078-A4204-A2 Pin 3 E Package TO-218 AB 1700V 25A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 25 16 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 50 32 TC = 25 °C TC = 90 °C Avalanche energy, single pulse 23 m J IC = 15 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C Power dissipation Ptot W -55 ... + 150 -55 ... + 150 Jul-30-1996 °C TC = 25 °C Chip or operating temperature Storage temperature Semiconductor Group Tj Tstg BUP 309 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - Rth JC ≤ 0.4 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max....