BUP314D Datasheet | Siemens Semiconductor Group

BUP 314D IGBT With Antiparallel Diode Preliminary data - Low forward voltage drop - High switching speed - Low tail current - Latch-up free - Including fast free-wheel diode Pin 1 G Type BUP 314D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4226-A2 Pin 3 E Package TO-218 AB 1200V 42A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current, (limited by bond wire) ± 20 A 42 33 TC = 60 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 84 66 TC = 25 °C TC = 90 °C Diode forward current TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls TC = 25 °C Power dissipation Ptot W -55 ... + 150 -55 ... + 150 Jul-30-1996 °C TC = 25 °C Chip or operating temperature Storage temperature 1 Tj Tstg Semiconductor Group BUP 314D Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - Rth JC Rth JCD ≤ 0.42 ≤...