BUP403 Datasheet | Siemens Semiconductor Group

BUP 403 IGBT Preliminary data - Low forward voltage drop - High switching speed - Low tail current - Latch-up free - Avalanche rated Pin 1 G Type BUP 403 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code C67078-A4406-A2 Pin 3 E 600V 42A Package TO-220 AB VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current, (limited by bond wire) ± 20 A 42 32 TC = 60 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 104 64 TC = 25 °C TC = 90 °C Avalanche energy, single pulse 65 m J IC = 25 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C Power dissipation Ptot - 55 ... + 150 - 55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group Jul-31-1996 BUP 403 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - Rth JC ≤...