BUP410D Datasheet | Siemens Semiconductor Group

BUP 410D IGBT With Antiparallel Diode Preliminary data - Low forward voltage drop - High switching speed - Low tail current - Latch-up free - Including fast free-wheel diode Pin 1 G Type BUP 410D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code Q67040-A4425-A2 Pin 3 E 600V 13A Package TO-220 AB VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 13 8 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 26 16 TC = 25 °C TC = 90 °C Diode forward current TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls TC = 25 °C Power dissipation Ptot W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group Dec-12-1996 BUP...