The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BUP 410D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Type BUP 410D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code Q67040-A4425-A2 Pin 3 E
VCE
600V
IC
13A
Package TO-220 AB
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 13 8
TC = 25 °C TC = 90 °C
Pulsed collector current, tp = 1 ms
ICpuls
26 16
TC = 25 °C TC = 90 °C
Diode forward current
IF
11
TC = 90 °C
Pulsed diode current, tp = 1 ms
IFpuls
72
TC = 25 °C
Power dissipation
Ptot
50
W -55 ... + 150 -55 ...
BUP410D Datasheet
