BUZ101S
BUZ101S is Power Transistor manufactured by Siemens Semiconductor Group.
Preliminary data
BUZ 101 S
SPP22N05
SIPMOS ® Power Transistor
- N channel
- Enhancement mode
- Avalanche-rated
- dv/dt rated
- 175°C operating temperature
Pin 1 G Type BUZ 101 S
Pin 2 D
Pin 3 S
55 V
22 A
RDS(on)
0.06 Ω
Package TO-220 AB
Ordering Code Q67040-S4013-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 22 16 Unit A
TC = 25 °C TC = 100 °C
Pulsed drain current
IDpuls
TC = 25 °C
Avalanche energy, single pulse
90 m J
ID = 22 A, VDD = 25 V, RGS = 25 Ω L = 372 µH, Tj = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt
IAR EAR dv/dt
22 5.5
A m J k V/µs
IS = 22 A, VDS = 40 V, di F/dt = 200 A/µs Tjmax = 175 °C
Gate source voltage Power dissipation 6
VGS Ptot
± 20...
