BUZ342
BUZ342 is Power Transistor manufactured by Siemens Semiconductor Group.
BUZ 342
SIPMOS ® Power Transistor
- N channel
- Enhancement mode
- Avalanche-rated
- dv/dt rated
- Ultra low on-resistance
- 175°C operating temperature Pin 1 G Type BUZ 342 Pin 2 D Pin 3 S
50 V
60 A
RDS(on)
0.01 Ω
Package TO-218 AA
Ordering Code C67078-S3135-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 60 Unit A
ID IDpuls
TC = 150 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
460 dv/dt m J
ID = 60 A, VDD = 25 V, RGS = 25 Ω L = 128 µH, Tj = 25 °C
Reverse diode dv/dt k V/µs
IS = 0 A, VDS = 0 V, di F/dt = 0 A/µs Tjmax = 0 °C
Gate source voltage Power dissipation
VGS Ptot
± 20 400
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg Rth JC Rth JA
-55 ... + 175 -55 ... + 175 ≤ 0.37 ≤ 75 E 55 / 175 / 56
°C K/W
Semiconductor...
