BUZ350 Datasheet | Siemens Semiconductor Group

BUZ 350 SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 350 200 V 22 A RDS(on) 0.12 Ω Package TO-218 AA Ordering Code C67078-S3117-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 22 Unit A ID IDpuls TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 22 12 m J ID = 22 A, VDD = 50 V, RGS = 25 Ω L = 1.39 m H, Tj = 25 °C Gate source voltage Power dissipation 450 VGS Ptot ± 20 125 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg Rth JC Rth JA -55 ... + 150 -55 ... + 150 ≤1 75 E 55 / 150 / 56 °C K/W 07/96 BUZ...