BUZ384 Datasheet | Siemens Semiconductor Group

BUZ 384 SIPMOS ® Power Transistor - N channel - Enhancement mode - FREDFET Pin 1 G Pin 2 D Pin 3 S Type BUZ 384 500 V 10.5 A RDS(on) 0.6 Ω Package TO-218 AA Ordering Code C67078-A3209-A2 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 500 500 Unit V VDS VDGR ID RGS = 20 kΩ Continuous drain current A 10.5 TC = 25 °C Pulsed drain current IDpuls TC = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 125 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg Rth JC Rth JA -55 ... + 150 -55 ... + 150 ≤1 75 E 55 / 150 / 56 °C K/W Semiconductor Group 07/96 BUZ...