BUZ60 datasheet by Siemens Semiconductor Group (now Infineon).
| Part number | BUZ60 |
|---|---|
| Datasheet | BUZ60_SiemensSemiconductorGroup.pdf |
| File Size | 177.45 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Power Transistor |
|
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Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 0.95 0.3 2.5 3.4 13.5 V 1.4 µs µC Values typ.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BUZ60 | N-Channel Power MOSFET | Intersil Corporation |
 |
BUZ60 | Power Transistor | Infineon Technologies AG |
 |
BUZ60 | N-Channel MOSFET | STMicroelectronics |
 |
BUZ60 | N-Channel MOSFET | INCHANGE |
|
BUZ60B | N-Channel Power MOSFET | Intersil Corporation |
View all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| BUZ60B | Power Transistor |
| BUZ61 | Power Transistor |
| BUZ61A | Power Transistor |
| BUZ63 | Power Transistor |
| BUZ67 | Power Transistor |
| BUZ10 | Power Transistor |
| BUZ100 | Power Transistor |
| BUZ100L | Power Transistor |
| BUZ100S | Power Transistor |
| BUZ100SL | Power Transistor |
