Datasheet4U Logo Datasheet4U.com

BUZ60 - Power Transistor

📥 Download Datasheet

Datasheet preview – BUZ60

Datasheet Details

Part number BUZ60
Manufacturer Siemens Semiconductor Group
File Size 177.45 KB
Description Power Transistor
Datasheet download datasheet BUZ60 Datasheet
Additional preview pages of the BUZ60 datasheet.

📁 Similar Datasheet

  • BUZ60 - N-Channel Power MOSFET (Intersil Corporation)
  • BUZ60 - Power Transistor (Infineon Technologies AG)
  • BUZ60 - N-Channel MOSFET (STMicroelectronics)
  • BUZ60 - N-Channel MOSFET (INCHANGE)
  • BUZ60B - N-Channel Power MOSFET (Intersil Corporation)
  • BUZ60B - N-Channel MOSFET (STMicroelectronics)
  • BUZ60B - N-Channel MOSFET (INCHANGE)
  • BUZ61 - Power Transistor (Infineon Technologies AG)
  • BUZ61A - Power Transistor (Infineon Technologies AG)
  • BUZ63 - N-Channel MOSFET (INCHANGE)
Other Datasheets by Siemens Semiconductor Group

Full PDF Text Transcription

Click to expand full text
BUZ 51 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 51 VDS 1000 V ID 3.4 A RDS(on) 4Ω Package TO-220 AB Ordering Code C67078-S1344-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 3.4 Unit A ID IDpuls 13.5 TC = 29 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3.4 12 mJ ID = 3.
Published: |