BUZ60
BUZ60 is Power Transistor manufactured by Siemens Semiconductor Group.
BUZ 51
SIPMOS ® Power Transistor
- N channel
- Enhancement mode
- Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 51
1000 V
3.4 A
RDS(on)
4Ω
Package TO-220 AB
Ordering Code C67078-S1344-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 3.4 Unit A
ID IDpuls
TC = 29 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
3.4 12 mJ
ID = 3.4 A, VDD = 50 V, RGS = 25 Ω L = 67 mH, Tj = 25 °C
Gate source voltage Power dissipation 410
VGS Ptot
± 20 125
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal...
