BUZ70L Datasheet | Siemens Semiconductor Group

BUZ 70 L SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated - Logic Level Pin 1 G Type BUZ 70 L Pin 2 D Pin 3 S 60 V 12 A RDS(on) 0.15 Ω Package TO-220 AB Ordering Code C67078-S1325-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 12 Unit A ID IDpuls TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 12 1 m J ID = 12 A, VDD = 25 V, RGS = 25 Ω L = 48.6 µH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 6 VGS Vgs Ptot ± 14 ± 20 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg Rth JC Rth JA -55 ... + 150 -55 ... + 150 ≤ 3.1 75 E 55 / 150 / 56 °C K/W Semiconductor...