• Part: BUZ76
  • Description: Power Transistor
  • Manufacturer: Siemens Semiconductor Group
  • Size: 174.98 KB
Download BUZ76 Datasheet PDF
BUZ76 page 2
Page 2
BUZ76 page 3
Page 3

Datasheet Summary

BUZ 76 SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 76 400 V 3A RDS(on) 1.8 Ω Package TO-220 AB Ordering Code C67078-S1315-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 3 Unit A ID IDpuls TC = 37 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3 5 mJ ID = 3 A, VDD = 50 V, RGS = 25 Ω L = 35 mH, Tj = 25 °C Gate source voltage Power dissipation 180 VGS Ptot ± 20 40 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance,...