BUZ77B Datasheet | Siemens Semiconductor Group

BUZ 77 B SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 77 B 600 V 2.9 A RDS(on) 3.5 Ω Package TO-220 AB Ordering Code C67078-S1320-A5 Maximum Ratings Parameter Continuous drain current Symbol Values 2.9 Unit A ID IDpuls TC = 29 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 2.7 5 m J ID = 2.7 A, VDD = 50 V, RGS = 25 Ω L = 45.3 m H, Tj = 25 °C Gate source voltage Power dissipation 180 VGS Ptot ± 20 75 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg Rth JC Rth JA -55 ... + 150 -55 ... + 150 ≤ 1.67 75 E 55 / 150 / 56 °C K/W 07/96 BUZ 77...