BXY43C Datasheet | Siemens Semiconductor Group

Silicon PIN Diodes q q q BXY 43 High-speed switching Phase shifting up to 10 GHz Power splitter Type BXY 43A BXY 43B BXY 43C Marking - Ordering Code Q62702-X116 Q62702-X104 Q62702-X105 Pin Configuration Cathode: black dot, Package1) T1 Maximum Ratings Parameter Breakdown voltage Forward current Peak forward current, tp =1 µs Total power dissipation Junction temperature Storage temperature range Operating temperature range Thermal Resistance Junction - case Rth JC 80 70 70 K/W Symbol BXY 43A V(BR) IF IFRM Ptot Tj Tstg Top 150 400 10 500 175 - 55 … + 150 - 55 … + 150 Values BXY 43B 150 500 20 600 BXY 43C 150 500 20 600 V m A A m W ˚C Unit 1) For detailed information see chapter Package Outlines. Semiconductor Group BXY 43 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 100 V Forward voltage IF = 100 m A AC Characteristics Diode capacitance VR = 50 V, f = 1 MHz BXY 43A BXY 43B BXY 43C Forward resistance IF = 10 m A, f = 100 MHz BXY 43A BXY 43B BXY 43C Charge carrier life time IF = 10 m A, IR = 6 m A BXY 43A BXY 43B BXY 43C Storage time IF = 10 m A, VR = 10 V BXY 43A BXY 43B BXY 43C Case series inductance Preaging at forward current for 168 hours BXY 43A BXY 43B BXY 43C Gross and fine leakage test - Ls IL - - - - 0.2 0.2 0.5 10- 8 - - - - torr.1 - s ts - - - - 15 20 25 0.3 - - - - n H A τL Values typ. max. Unit IR VF - - 5 1 - - n A V - - - rf - - - 1.2 1.0...