BXY43P Datasheet | Siemens Semiconductor Group

Features - Hi Rel Discrete and Microwave Semiconductor - Current controlled RF resistor for RF attenuators and switches - High reverse voltage - Matched diode - pair - Hermetically sealed microwave package - qualified - ESA/SCC Detail Spec. No.: 5513/030 ESD: BXY 43P Electrostatic discharge sensitive device, observe handling precautions! Marking Ordering Code see below Pin Configuration Package FP Type BXY 43P-FP (ql) (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702X164 H: High Rel Quality, S: Space Quality, Ordering Code: on request Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702X167 (see Chapter Order Instructions for ordering example) Table 1 Parameter Reverse voltage Forward current Power dissipation Operating temperature range Storage temperature range Soldering temperature Junction temperature Thermal resistance junction-case Maximum Ratings Symbol Limit Values 150 400 500 - 55 to + 150 - 65 to + 175 + 235 175 100 Unit V m A m W °C °C °C °C K/W VR IF Ptot Top Tstg Tsol Tj Rth(j-c) Semiconductor Group Draft A02 1998-04-01 BXY 43P Electrical Characteristics Table 2 Parameter Reverse current 1 VR1 = 150 V Reverse current 2 VR2 = 100 V Forward voltage IF = 100 m A Table 3 Parameter Total capacitance VR = 50 V, f = 1 MHz Forward resistance f = 100 MHz, IF1 = 20 m A Forward resistance f = 100 MHz, IF2 = 1 m A Forward resistance f = 100 MHz, IF3 = 10 m A Minority carrier lifetime IF = 10 m A, IR = 6 m A, IR = 3 m A Table 4 Parameter DC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. 0.97 max. 100 10 1 n A n A V Unit IR1 IR2 VF AC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. 0.6 55 2.2 0.9 650 max. 0.85 70 3.0 1.5 p F W W W ns 0.4 250 Unit CT RF1 RF2 RF3 t L Matching Requirements at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. max. 15 15 % % Unit Difference in forward resistance 2 1) RF2 Difference in forward...