| Part number | CFY25-17 |
|---|---|
| Datasheet | CFY25-17_SiemensSemiconductorGroup.pdf |
| File Size | 158.91 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
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GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! TS is measured on the source lead at the soldering point to the pcb.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| CFY25-20 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-23 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY30 | GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
| CFY35 | GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
| CFY35-20 | GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
| CFY35-23 | GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
| CFY77 | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
| CFY77-08 | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
| CFY77-10 | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
