CFY25-20- GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
CFY25-17- GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
CFY25- GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
CFY30- GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
CFY35- GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
CFY35-20- GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
CFY35-23- GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
CFY77- AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
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GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q62703-F107 Q62703-F108 Pin Configuration 1 2 3 4 D S G S Package1) Micro-X
Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Total power dissipation, TS ≤ 56 ˚C2) Channel temperature Storage temperature range Thermal Resistance Channel - soldering point2) Rth chS 375 K/W Symbol VDS VDG VGS ID Ptot Tch Tstg Values 5 7 –5…+0 80 250 150 – 65 … + 150 mA mW ˚C Unit V
1) 2)
For detailed information see chapter Package Outlines.
CFY25-23 Datasheet
