| Part number | CFY30 |
|---|---|
| Datasheet | CFY30_SiemensSemiconductorGroup.pdf |
| File Size | 46.65 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
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GaAs FET CFY 30 ________________________________________________________________________________________________________ Datasheet Low noise ( Fmin = 1.4 dB @ 4 GHz ) High gain ( 11.5 dB typ. @ 4 GHz ) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion implanted planar structure Chip all gold metallization Chip nitride passivation ESD: Electrostatic discharge sensitive device, observe handling precautions!
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| CFY35 | GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
| CFY35-20 | GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
| CFY35-23 | GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
| CFY25 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-17 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-20 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-23 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY77 | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
| CFY77-08 | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
| CFY77-10 | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
