CFY30 Overview
GaAs FET CFY 30 ________________________________________________________________________________________________________ Datasheet Low noise ( Fmin = 1.4 dB @ 4 GHz ) High gain ( 11.5 dB typ. @ 4 GHz ) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion implanted planar structure Chip all gold metallization Chip nitride passivation ESD: Electrostatic discharge sensitive device, observe handling precautions!