CFY35-20- GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
CFY35- GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
CFY30- GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
CFY25- GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
CFY25-17- GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
CFY25-20- GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
CFY25-23- GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
CFY77- AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
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GaAs FET
CFY 35
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Datasheet
* Low noise * High gain * For low-noise front end amplifiers * For DBS down converters
ESD:
Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (tape and reel)
Pin Configuration 1 2 3 4
Package 1)
CFY 35-20 CFY 35-23
NA NB
Q62702-F1393 Q62702-F1394
S
D
S
G
MW-4
Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 53°C) 2) Thermal resistance Channel-soldering point 2)
Symbol
Value 5 6 -4 ... 0 60 150 -40...