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CFY77-10 - AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)

Key Features

  • Very low noise.
  • Very high gain.
  • For low noise front end amplifiers up to 20 GHz.
  • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CFY77-08 CFY77-10 HG HH Q62702-F1549 Q62702-F1559 MW-4 MW-4 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 51°C) 2) Therm.

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Full PDF Text Transcription for CFY77-10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CFY77-10. For precise diagrams, and layout, please refer to the original PDF.

AlGaAs / InGaAs HEMT CFY 77 ________________________________________________________________________________________________________ Datasheet Features * Very low noise *...

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________________________________ Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CFY77-08 CFY77-10 HG HH Q62702-F1549 Q62702-F1559 MW-4 MW-4 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 51°C) 2) Thermal resistance Channel-soldering point source 1) Dimensions see chapter Package Outlines 2) TS: Temperatur

More Datasheets from Siemens Semiconductor Group (now Infineon)

Part Number Description
CFY77-08 AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
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CFY35 GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
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