CLY10 Datasheet | Siemens Semiconductor Group

Ga As FET CLY 10 - Power amplifier for mobile phones - For frequencies from 400 MHz to 2.5 GHz - Wide operating voltage range: 2.7 to 6 V - POUT at VD=3V, f=1.8GHz 28.5 d Bm typ. - High efficiency better 55 % ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Q62702-L94 1 G Pin Configuration 2 3 4 S D S Package 1) CLY 10 CLY 10 SOT 223 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature Total power dissipation (Ts < 80 °C) 2) Total power dissipation (Ts < 110 °C) 2) Symbol VDS VDG VGS ID TCh Tstg Ptot DC Values 9 12 -6 2.1 150 -55...+150 3.5 2.0 Unit V V V A °C °C W Thermal resistance Channel - soldering point 2) Rth Ch S ≤20 K/W 1) Dimensions see chapter Package Outlines 2) Ts is measured on the source lead to the PCB under load. Siemens Aktiengesellschaft pg. 1/7 17.12.96 HL EH PD 21 Ga As FET Electrical characteristics (TA = 25°C , unless otherwise specified) Characteristics Drain-source saturation current VDS = 3 V VGS = 0 V CLY 10 Symbol min 1.2 -3.8 typ 1.6 10 -2.8 max 2.4 200 35 -1.8 Unit A µA µA V d B IDSS ID IG VGS(p) G Drain-source pinch-off...