HYB3118160BSJ-50 - 1M x 16-Bit Dynamic RAM 1k Refresh
Siemens Semiconductor Group (now Infineon)
General Description
DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns)
Key Features
include single + 3.3 V (± 0.3 V) power supply, direct interfacing with highperformance logic device families. The HYB3116160BSTL parts have a very low power „sleep mode“ suppported by Self Refresh. Ordering Information Type
HYB 3116160BSJ-50 HYB 3116160BSJ-60 HYB 3116160BSJ-70 HYB 3118160BSJ-50 HYB 3118160BSJ-60 HYB 3118160BSJ-70 HYB 3116160BST-50 HYB 3116160BST-60 HYB 3116160BST-70 HYB 3118160BST-50 HYB 3118160BST-60 HYB 3118160BST-70
Ordering Code
on request on request on request on request on.
Full PDF Text Transcription for HYB3118160BSJ-50 (Reference)
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HYB3118160BSJ-50. For precise diagrams, and layout, please refer to the original PDF.
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 Advanced Information • • • 1 048 576 words by 16-bit organizati...
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60/-70 Advanced Information • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns • • • • • • • • • • Single + 3.3 V (± 0.3 V) supply Low power dissipation max. 720 active mW ( HYB3118160BSJ/BST-50) max. 648 active mW ( HYB3118160BSJ/BST-60) max. 576 active mW ( HYB3118160BSJ/BST-70) max. 360 active mW ( HYB3116160BSJ/BST-50) max. 324 active mW ( HYB3116160BSJ/BST-60) max. 288 active mW (
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