HYB314100BJ-60 Overview
252 mW active (-50 version) max. 216 mW active (-60 version) max. 198 mW active (-70 version) Standby power dissipation:.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | HYB314100BJ-60 |
|---|---|
| Datasheet | HYB314100BJ-60 HYB-314 Datasheet (PDF) |
| File Size | 1.13 MB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
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252 mW active (-50 version) max. 216 mW active (-60 version) max. 198 mW active (-70 version) Standby power dissipation:.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| HYB314100BJ-50 | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJ-70 | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJBJL-50- | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJL-50 | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJL-60 | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJL-70 | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314171BJ-50 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-60 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-70 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJL-50 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |