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HYB314171BJ-50 Datasheet 3.3v 256 K X 16-bit Dynamic Ram 3.3v Low Power 256 K X 16-bit Dynamic Ram With Self Refresh

Manufacturer: Siemens Semiconductor Group (now Infineon)

Overview: 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 314171BJ-50/-60/-70 HYB 314171BJL-50/-60/-70 Preliminary Information • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) 70 ns (-70 version) CAS access time: 15ns (-50,-60 version) 20 ns (-70 version) Cycle time: 95 ns (-50 version) 110 ns (-60 version) 130 ns (-70 version) Fast page mode cycle time 35 ns (-50 version) 40 ns (-60 version) 45 ns (-70 version) Single + 3.3 V (± 0.3 V) supply with a builtin VBB generator • • • • • • • • • • • • • • Low Power dissipation max. 450 mW active (-50 version) max. 378 mW active (-60 version) max. 306 mW active (-70 version) Standby power dissipation 7.2 mW standby (TTL) 3.6 mW max. standby (CMOS) 0.72 mW max. standby (CMOS) for Low Power Version Output unlatched at cycle end allows twodimensional chip selection Read, write, read-modify write, CASbefore-RAS refresh, RAS-only refresh, hidden-refresh and fast page mode capability 2 CAS / 1 WE control Self Refresh (L-Version) All inputs and outputs TTL-patible 512 refresh cycles / 16 ms 512 refresh cycles / 128 ms Low Power Version only Plastic Packages: P-SOJ-40-1 400mil width The HYB 314171BJ/BJL is a 4 MBit dynamic RAM organized as 262 144 words by 16-bit. The HYB 314171BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 314171BJ/BJL to be packed in a standard plastic 400mil wide P-SOJ-40-1 package. This package size provides high system bit densities and is patible with monly used automatic testing and insertion equipment.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • include Self Refresh (LVersion), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families. Semiconductor Group 1 7.96 HYB 314171BJ/BJL-50/-60/-70 3.3V 256 K x 16-DRAM Ordering Information Type HYB 314171BJ-50 HYB 314171BJ-60 HYB 314171BJ-70 HYB 314171BJL-50 HYB 314171BJL-60 HYB 314171BJL-70 Truth Table RAS H L L L L L L L L LCAS H H L H L L H L L UCAS H H H L L H L L L WE H H H H H L L L H OE H H L L L H H H H I/O1-I/O8 High-Z High-Z Dout High-Z.

More Datasheets from Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB314171BJ-60 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJ-70 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJL-50 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJL-60 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJL-70 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314175BJ-50 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
HYB314175BJ-50- 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
HYB314175BJ-55 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
HYB314175BJ-60 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
HYB314175BJL-50 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh

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