This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | HYB314171BJL-50 |
|---|---|
| Datasheet | HYB314171BJL-50 HYB-314 Datasheet (PDF) |
| File Size | 1.31 MB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
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3.3V 50ns 256 K x 16 DRAM 3.3V 60 ns 256 K x 16 DRAM 3.3V 70 ns 256 K x 16 DRAM 3.3V 50 ns 256 K x 16 DRAM 3.3V 60 ns 256 K x 16 DRAM 3.3V 70 ns 256 K x 16 DRAM Pin Names A0-A8 RAS UCAS, LCAS WE OE I/O1 I/O16 Address Inputs Row Address Strobe Column Address.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| HYB314171BJL-60 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJL-70 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-50 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-60 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-70 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314175BJ-50 | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJ-50- | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJ-55 | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJ-60 | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJL-50 | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
