| Part number | HYB3164160AT-50 |
|---|---|
| Datasheet | HYB3164160AT-50_SiemensSemiconductorGroup.pdf |
| File Size | 216.22 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | 4M x 16-Bit Dynamic RAM |
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The device is fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| HYB3164160AT-40 | 4M x 16-Bit Dynamic RAM |
| HYB3164160AT-60 | 4M x 16-Bit Dynamic RAM |
| HYB3164160ATL-50 | 4M x 16-Bit Dynamic RAM |
| HYB3164160ATL-60 | 4M x 16-Bit Dynamic RAM |
| HYB3164160T-50 | 4M x 16-Bit Dynamic RAM |
| HYB3164160T-60 | 4M x 16-Bit Dynamic RAM |
| HYB3164165AT-40 | 4M x 16-Bit Dynamic RAM |
| HYB3164165AT-50 | 4M x 16-Bit Dynamic RAM |
| HYB3164165AT-60 | 4M x 16-Bit Dynamic RAM |
| HYB3164165ATL-50 | 4M x 16-Bit Dynamic RAM |
