HYB3164160AT-50
4M x 16-Bit Dynamic RAM ( 8k, 4k & 2k Refresh)
HYB 3164160AT(L) -40/-50/-60 HYB 3165160AT(L) -40/-50/-60 HYB 3166160AT(L) -40/-50/-60
Advanced Information
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4 194 304 words by 16-bit organization 0 to 70 °C operating temperature Fast Page Mode operation Performance: -40 t RAC t CAC t AA t RC t PC RAS access time CAS access time Access time from address Read/write cycle time Fast page mode cycle time 40 10 20 75 30 -50 50 13 25 90 35 -60 60 15 30 110 40 ns ns ns ns ns
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Single + 3.3 V (± 0.3V) power supply Low power dissipation: -40 HYB3166160AT(L) HYB3165160AT(L) HYB3164160AT(L) 900 756 612 -50 558 468 378 -60 396 324 270 m W m W m W
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- 7.2 m W standby (TTL) 3.24 m W standby (MOS) 720 µW standby for L-version Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh and self refresh (L-version only) 2 CAS / 1 WE byte control 8192 refresh cycles /128 ms , 13 R/ 9C addresses (HYB 3164160AT) 4096 refresh cycles / 64 ms , 12 R/ 10C...
