HYB3164165BT-40
4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-version)
Preliminary Information
- -
- -
HYB 3164165BT(L) -40/-50/-60 HYB 3165165BT(L) -40/-50/-60 HYB 3166165BT(L) -40/-50/-60
4 194 304 words by 16-bit organization 0 to 70 °C operating temperature Hyper Page Mode
- EDO
- operation Performance: -40 t RAC t CAC t AA t RC t HPC RAS access time CAS access time Access time from address Read/write cycle time Hyper page mode (EDO) cycle time 40 10 20 69 16 -50 50 13 25 84 20 -60 60 15 30 104 25 ns ns ns ns ns
- -
Single + 3.3 V ( ± 0.3V) power supply Low power dissipation: -40 HYB3166165BT(L) HYB3165165BT(L) HYB3164165BT(L) 864 486 306 -50 702 396 252 -60 558 324 216 m W m W m W
- -
- -
- 7.2 m W standby (TTL) 3.6 m W standby (MOS) 720 µA standby for L-version Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh and Self Refresh (L-version only 2 CAS / 1 WE byte control 8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164165BT) 4096 refresh...
