| Part number | HYB3164165BT-60 |
|---|---|
| Datasheet | HYB3164165BT-60_SiemensSemiconductorGroup.pdf |
| File Size | 305.00 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | 4M x 16-Bit Dynamic RAM |
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The device is fabricated in an advanced first generation 64Mbit 0,35 µm CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)165BT operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| HYB3164165BT-40 | 4M x 16-Bit Dynamic RAM |
| HYB3164165BT-50 | 4M x 16-Bit Dynamic RAM |
| HYB3164165BTL-50 | 4M x 16-Bit Dynamic RAM |
| HYB3164165BTL-60 | 4M x 16-Bit Dynamic RAM |
| HYB3164165AT-40 | 4M x 16-Bit Dynamic RAM |
| HYB3164165AT-50 | 4M x 16-Bit Dynamic RAM |
| HYB3164165AT-60 | 4M x 16-Bit Dynamic RAM |
| HYB3164165ATL-50 | 4M x 16-Bit Dynamic RAM |
| HYB3164165ATL-60 | 4M x 16-Bit Dynamic RAM |
| HYB3164165T-50 | 4M x 16-Bit Dynamic RAM |
