HYB3164165T-60 Datasheet | Siemens Semiconductor Group

4M x 16-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164165T(L) -50/-60 HYB 3165165T(L) -50/-60 Preliminary Information - - - - - - - - - - - - 4 194 304 words by 16-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 84 ns (-50 version) 104 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns ( -60 version) Hyper page mode (EDO) cycle time 20 ns (-50 version) 25 ns (-60 version) Single + 3.3 V (± 0.3V) power supply Low power dissipation max. 396 active m W ( HYB 3164165T(L)-50) max. 360 active m W ( HYB 3164165T(L)-60) max. 504 active m W ( HYB 3165165T(L)-50) max. 432 active m W ( HYB 3165165T(L)-60) 7.2 m W standby (TTL) 720 W standby (MOS) 14.4 m W Self Refresh (L-version only) Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh and self refresh modes Hyper page mode (EDO) capability 2 CAS / 1 WE byte control 8192 refresh...