HYB3164400J-50 Datasheet | Siemens Semiconductor Group

16M x 4-Bit Dynamic RAM (4k & 8k Refresh) HYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Preliminary Information - - - - - - - - - - - 16 777 216 words by 4-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 90 ns (-50 version) 110 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns ( -60 version) Fast page mode cycle time 35 ns (-50 version) 40 ns (-60 version) Single + 3.3 V (± 0.3V) power supply Low power dissipation max. 396 active m W ( HYB 3164400J/T-50) max. 360 active m W ( HYB 3164400J/T-60) max. 504 active m W ( HYB 3165400J/T-50) max. 432 active m W ( HYB 3165400J/T-60) 7.2 m W standby (TTL) 720 W standby (MOS) Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh and self refresh modes Fast page mode capability 8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164400J/T) 4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB...