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HYB3164405T-60 - 16M x 4-Bit Dynamic RAM

General Description

500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 50

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Full PDF Text Transcription for HYB3164405T-60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HYB3164405T-60. For precise diagrams, and layout, please refer to the original PDF.

16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164405J/T(L) -50/-60 HYB 3165405J/T(L) -50/-60 Preliminary Information • • • • • • • • • • • 16 777 216 words ...

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50/-60 Preliminary Information • • • • • • • • • • • 16 777 216 words by 4-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 84 ns (-50 version) 104 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns ( -60 version) Hyper page mode (EDO) cycle time 20 ns (-50 version) 25 ns (-60 version) Single + 3.3 V (± 0.3V) power supply Low power dissipation max. 396 active mW ( HYB 3164405J/T(L)-50) max. 360 active mW ( HYB 3164405J/T(L)-60) max. 504 active mW ( HYB 3165405J/T(L)-50) max. 432 active mW ( HYB 3165405J/T(L)-60) 7.2 m

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