• Part: HYB3164805AJ-40
  • Description: 8M x 8-Bit Dynamic RAM
  • Manufacturer: Siemens Semiconductor Group
  • Size: 327.55 KB
Download HYB3164805AJ-40 Datasheet PDF
Siemens Semiconductor Group
HYB3164805AJ-40
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) HYB 3164805AJ/AT(L) -40/-50/-60 HYB 3165805AJ/AT(L) -40/-50/-60 Advanced Information - - - - 8 388 608 words by 8-bit organization 0 to 70 °C operating temperature Hyper Page Mode - EDO - operation Performance: -40 t RAC t CAC t AA t RC t HPC RAS access time CAS access time Access time from address Read/write cycle time Hyper page mode (EDO) cycle time 40 10 20 69 16 -50 50 13 25 84 20 -60 60 15 30 104 25 ns ns ns ns ns - - Single + 3.3 V (± 0.3V) power supply Low power dissipation: max. 450 active m W ( HYB 3164805AJ/AT(L)-40) max. 360 active m W ( HYB 3164805AJ/AT(L)-50) max. 324 active m W ( HYB 3164805AJ/AT(L)-60) max. 612 active m W ( HYB 3165805AJ/AT(L)-40) max. 468 active m W ( HYB 3165805AJ/AT(L)-50) max. 432 active m W ( HYB 3165805AJ/AT(L)-60) 7.2 m W standby (LVTTL) 3.24 m W standby (LVMOS) 720 µA standby for L-version Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh - Self refresh...