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HYB3165400T-50 - 16M x 4-Bit Dynamic RAM

General Description

500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) Semiconductor Group 62 HYB 3164(

Key Features

  • tCPA tRAS 35 10.
  • 50.
  • 30.

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Full PDF Text Transcription for HYB3165400T-50 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HYB3165400T-50. For precise diagrams, and layout, please refer to the original PDF.

16M x 4-Bit Dynamic RAM (4k & 8k Refresh) HYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Preliminary Information • • • • • • • • • • • 16 777 216 words by 4-bit organizati...

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Information • • • • • • • • • • • 16 777 216 words by 4-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 90 ns (-50 version) 110 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns ( -60 version) Fast page mode cycle time 35 ns (-50 version) 40 ns (-60 version) Single + 3.3 V (± 0.3V) power supply Low power dissipation max. 396 active mW ( HYB 3164400J/T-50) max. 360 active mW ( HYB 3164400J/T-60) max. 504 active mW ( HYB 3165400J/T-50) max. 432 active mW ( HYB 3165400J/T-60) 7.

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