IL55B Datasheet | Siemens Semiconductor Group

FEATURES - High Collector-Emitter Breakdown Voltage- 80 V minimum - High Isolation Resistance, 1011 W Typical - Standard Plastic DIP Package - Underwriters Lab File #E52744 V D E - VDE 0884 Available with Option 1 DESCRIPTION The IL55B is an optically coupled isolator with a Gallium Arsenide infrared LED and a silicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. Maximum Ratings Emitter Peak Reverse Voltage 3 V Continuous Forward Current 60 m A Power Dissipation at 25°C 100 m W Derate Linearly from 55°C 1.33 m W/°C Detector Collector-Emitter Breakdown Voltage, BVCEO 80 V Emitter-Collector Breakdown Voltage BVECO 5 V Collector (load) Current 125 m A Power Dissipation at 25°C Ambient 150 m W Derate Linearly from 25°C 2.0 m W/°C Package Total Dissipation at 25°C Ambient 250 m W Derate Linearly from 25°C 3.3 m W/°C Isolation Test Voltage (between emitter and detector refered to standard climate 23°C/50%RH, DIN 50014) 5300 VACRMS Creepage 7 mm min. Clearance 7 mm min. Tracking Resitance, Group III (KC>600 per VDE 110 - 6,Table 3 and DIN 53480/VDE 0330, Part 1 Isolation Resistance VIO=500 V, TA=25°C 1012 Ω VIO=500 V, TA=100°C 1011 Ω Storage Temperature - 55°C to +150°C Operating Temperature - 55°C to +100°C...