IL66B Datasheet | Siemens Semiconductor Group

FEATURES - Internal RBE for High Stability - High Current Transfer Ratio at IF=2 m A, VCE=5 V IL66B-1, 200% min. IL66B-2, 750% min. - Withstand Test Voltage, 5300 VACRMS - No Base Connection - High Isolation Resistance - Standard Plastic DIP Package - Underwriters Lab Approval #E52744 V - VDE 0884 Available with Option 1 Dimensions in inches (mm) 3 2 1 pin one ID. .248 (6.30) .256 (6.50) Anode 1 Cathode 2 NC 3 6 NC 5 Collector 4 Emitter 5 .335 (8.50) .343 (8.70) .039 (1.00) min. .300 (7.62) typ. .130 (3.30) .138 (3.50) DESCRIPTION The IL66B is an optically coupled isolator employing a Gallium Arsenide infrared emitter and a silicon photodarlington detector. Switching can be acplished while maintaining a high degree of isolation between driving and load circuits. They can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. Maximum Ratings (at 25°C) Emitter Peak Reverse Voltage 6 V Continuous Forward Current 60 m A Power Dissipation at 25°C 100 m W Derate Linearly from 55°C 1.33 m W/°C Detector Collector-Emitter Breakdown Voltage 60 V Emitter-Collector Breakdown Voltage 5 V Power Dissipation at 25°C Ambient 200 m W Derate Linearly from 25°C 2.6 m W/°C Package Isolation Test Voltage (t=1 sec.) 5300 VACRMS Isolation Resistance VIO=500 V, TA=25°C ≥1012 Ω VIO=500 V, TA=100°C ≥1011 Ω Total Dissipation at 25°C 250 m W Derate Linearly from 25°C 3.3 m W/°C Creepage Path 7 min mm Clearance Path 7 min mm Storage Temperature - 55°C to +150°C Operating Temperature - 55°C to +100°C Lead Soldering...