ILD32 Datasheet | Siemens Semiconductor Group

FEATURES - Very High Current Transfer Ratio, 500% Min. - Isolation Test Voltage, 5300 VACRMS - High Isolation Resistance, 1011 Ω Typical - Low Coupling Capacitance - Standard Plastic DIP Package - Underwriters Lab File #E52744 V - VDE 0884 Available with Option 1 ILQ32 Dimensions in inches (mm) Dual Channel .268 (6.81) .255 (6.48) 4 3 2 1 Pin One I.D. Anode 8 Emitter 7 Collector 6 Collector 5 Emitter Cathode 2 Cathode 3 5 6 7 8 Anode 4 .390 (9.91) .379 (9.63) Maximum Ratings (Each Channel) Emitter Peak Reverse Voltage 3 V Continuous Forward Current 60 m A Power Dissipation at 25°C 100 m W Derate Linearly from 25°C 1.33 m W/°C Detector Collector-Emitter Breakdown Voltage 30 V Collector (Load) Current 125 m A Power Dissipation at 25°C Ambient 150 m W Derate Linearly from 25°C 2.0 m W/°C Package Isolation Test Voltage (between emitter and detector refer to standard climate 23°C/50%RH, DIN 50014) t=1 sec 5300 VACRMS Creepage 7 mm min. Clearance 7 mm min. parative Tracking Index per DIN IEC 112/VDE303, part 1 ≥175 Isolation Resistance VIO=500V, TA=25°C RIO=1012 Ω VIO=500V, TA=100°C RIO=1011 Ω Total Dissipation at 25°C Ambient ILD32 400 m W ILQ32 500 m W Derate Linearly from 25°C ILD32 5.33 m W/°C ILQ32 6.67 m W/°C Storage Temperature - 55°C to +150°C Operating Temperature - 55°C to +100°C Lead Soldering Time at 260°C 10 sec....