ILD620 Datasheet | Siemens Semiconductor Group

FEATURES - Identical Channel to Channel Footprint ILD620 Crosses to TLP620-2 ILQ620 Crosses to TLP620-4 - Current Transfer Ratio (CTR) at IF= ± 5 m A ILD/Q620: 50% Min. ILD/Q620GB: 100% Min. - Saturated Current Transfer Ratio (CTRSAT) at IF= ± 1 m A ILD/Q620: 60% Typ. ILD/Q620GB: 30% Min. - High Collector-Emitter Voltage, BVCEO=70 V - Dual and Quad Packages Feature : - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved mon Mode Rejection - Field-Effect Stable by TRIOS (TRansparent IOn Shield) - Isolation Test Voltage from Double Molded Package - Underwriters Lab File #E52744 - VDE 0884 Available with Option 1 Maximum Ratings (Each Channel) Emitter Forward Current ± 60 m A Surge Current ± 1.5 A Power Dissipation 100 m W Derate from 25°C 1.3 m W/°C Detector Collector-Emitter Breakdown Voltage 70 V Collector Current 50 m A Collector Current (t <1 ms) 100 m A Power Dissipation 150 m W Derate from 25°C 2 m W/°C Package Isolation Test Voltage(t=1 sec.) 5300 VACRMS Package Dissipation, ILD620/GB 400 m W Derate from 25°C 5.33 m W/°C Package Dissipation, ILQ620/GB 500 m W Derate from 25°C 6.67 m W/°C Creepage 7 mm min. Clearance 7 mm min. Isolation Resistance VIO=500 V, TA=25°C ≥1012 Ω VIO=500 V, TA=100°C ≥10 11 Ω Storage Temperature - 55°C to +150°C Operating Temperature - 55°C to +100°C Junction Temperature...