| Part number | Q60215-Y111-S4 |
|---|---|
| Datasheet | Q60215-Y111-S4_SiemensSemiconductorGroup.pdf |
| File Size | 185.02 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silizium-Fotoelement Silicon Photovoltaic Cell |
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Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Symbol Symbol Wert Value 55 ... + 100 1 Einheit Unit °C V Top; Tstg VR Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 0 V Spectral sensitivity Wellenlänge der max.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q60215-Y111-S5 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y1111 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60215-Y1112 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60215-Y1113 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60215-Y62 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60215-Y63-S1 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y65 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y66 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y67 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60217-Y20 | PNP THYRISTOR TETRODE |
